Researchers Developed Nanoscale Transistor from an Oxide Semiconductor

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Researchers developed a nanoscale transistor from an oxide semiconductor, according to a study conducted on April 17, 2018.

This study was conducted by the researchers at The University of Manchester and Shandong University in China. They have developed an ultrafast nanoscale transistor, which is known as thin film transistor or TFT. It is made out of an oxide semiconductor. This is the first oxide-semiconductor based transistor that can operate at a benchmark speed of 1 GHz. This development will lead to the invention of electronic gadgets that are faster, brighter, and more flexible.

A liquid crystal display (LCD) usually contains a thin film transistor and can be found in most modern gadgets with LCD screens such as smart phones, tablets and high-definition televisions. There is a TFT available behind each individual pixel and they act like individual switches, which allow the pixels to change state rapidly, making them turn on and off much more quickly. However, the TFTs that are presently used are silicon-based, which are opaque, rigid, and expensive in comparison to the oxide semiconductor family of transistors that has been developed by the researchers from the UK and China. The flexibility of TFTs is the most impressive feature about it.

Aimin Song, Professor of Nanoelectronics in the School of Electrical & Electronic Engineering, The University of Manchester said, “TVs can already be made extremely thin and bright. Our work may help make TV more mechanically flexible and even cheaper to produce. But, perhaps even more importantly, our GHz transistors may enable medium or even high performance flexible electronic circuits, such as truly wearable electronics. Wearable electronics requires flexibility and in many cases transparency, too.” Researchers are confident that oxide-semiconductor based technologies will be beneficial in the development of new electronic gadgets that are faster and more flexible.

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